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| switching diode features z fast switching speed z for general purpose switching applications z high conductance baw56t marking: jd BAV70T mark ing: jj bav99t marking: je maximum ratings @ta =25 parameter symbol limit unit reverse voltage v r 85 v forward current i o 75 ma forward power dissipation p d 150 mw junction temperature t j 150 storage temperature t stg -55~ + 150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 1 a 85 v i r1 v r =75v 2 a reverse voltage leakage current i r2 v r =25v 0.03 a forward voltage v f i f =1ma i f =10ma i f =50ma i f =150ma 715 855 1000 1250 mv diode capacitance c d v r =0 f=1mhz 1.5 pf reverse recovery time t r r i f =i r =10ma i rr =0.1i r, r l =100 ? 4 n s sot-523 z 2012-1 willas electronic corp. sot-523 plastic-encapsulate diodes b av70t bav99t baw56t z
0481 21 62 0 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 0 50 100 150 200 0.0 0.4 0.8 1.2 1.6 0.1 1 10 100 0 2 04 06 08 01 0 0 1 10 100 1000 10000 t a =25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) power derating curve power dissipation p d (mw) ambient temperature t a ( ) 0.3 3 30 300 3 30 300 3000 forward characteristics t a = 1 0 0 t a = 2 5 forward current i f (ma) forward voltage v f (v) reverse characteristics typical characteristics t a =100 t a =25 reverse current i r (na) reverse voltage v r (v) sot-523 plastic-encapsulate diodes b av70t bav99t baw56t 2012-1 willas electronic corp. outline drawing dimensions in inches and (millimeters) sot-523 rev.d .043(1.10) .035(0.90) .069(1.75) .057(1.45) .004(0.10)min. .008(0.20) .004(0.10) .035(0.90) .028(0.70) .006(0.15) .014(0.35) .004(0.10)max. .067(1.70) .059(1.50) .035(0.90) .028(0.70) .014(0.35) .010(0.25) 2012-1 willas electronic corp. sot-523 plastic-encapsulate diodes b av70t bav99t baw56t |
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